深圳市优富瑞明科技有限公司

深圳市优富瑞明科技有限公司

MOS

说明:ID在TC=25℃测得;PD在TC=25℃测得;RDS在10V最大值条件下测得;Ciss为典型值;Qg为典型值;
Part Vds Min (V) ID (A) RDS(on) (mΩ) PD (W) Vgs (±V) Vth (V) Ciss (pF) Qg (nC) Configuration Package
HYG170C03LR1S 30/-30 9.5/-8 16.5/30 3.0/3.0 20/20 1~3 /-1~-3 446/1210 13.7/18.5 N+P SOP8L
HYG110C03LR1D4 30/-30 25/-17 14/30 21/21 20/20 1~3 /-1~-3 762/1300 15.9/20.2 N+P TO-252-4L
HYG080NH03LR1C1 30 31/33 11/9.5 21.4/21.4 20/20 1~3 /1~3 709/966 16/23.2 Half Bridge DFN8L(0303)
HYG080ND03LA1S 30 11 12 2.5 20 1~3 680 14.6 Dual - N SOP8L
HYG170ND03LA1C1 30 24 19 17.8 20 1~3 354 9 Dual - N DFN8L(0303)
HYG420ND06LR1S 60 5 46 2.4 20 1~3 750 15 Dual - N SOP8L
HYG130ND03LR1S 30 10.5 14 2.8 20 1~3 546 16.1 Dual - N SOP8L
HYG170ND03LR1S 30 9.5 16.1 2.6 20 1~3 446 13.7 Dual - N SOP8L
HYG850PD02KA1C6 -20 -3.5 N/A 2 10 -0.4~-1 582 7.2 Dual - P DFN6L(0202)
HYG200P10LR1B -100 -80 28 214 20 -1~-3 11520 181 single - P TO-263-2L
HYG400P10LR1P -100 -40 58 100 20 -1~-3 5402 79 single - P TO-220FB-3L
HYG400P10LR1B -100 -40 58 100 20 -1~-3 5402 79 single - P TO-263-2L
HYG200P10LR1P -100 -80 28 214 20 -1~-3 11520 181 single - P TO-220FB-3L
HYG400P10LR1D -100 -40 55 100 20 -1~-3 5003 83 single - P TO-252-2L
HY10P10U -100 -10 225 31.3 20 -1~-3 1034 30 single - P TO-251-3L
HY10P10D -100 -10 225 31.3 20 -1~-3 1034 30 single - P TO-252-2L
HYG800P10LR1D -100 -20 98 75 20 -1~-3 3273 42.6 single - P TO-252-2L
HYG800P10LR1S -100 -8 87 5.4 20 -1~-3 3307 53.4 single - P SOP8L
HY06P10S -100 -6 215 2.5 20 -1~-3 900 28 single - P SOP8L
HYG086P06LA1B -60 -85 9 208 20 -1~-3 9202 169 single - P TO-263-2L
HYG045P06LA1B -60 -160 5 250 20 -1~-2.5 16993 319 single - P TO-263-2L
HYG210P06LQ1D -60 -40 25 60 20 -1~-3 3679 90 single - P TO-252-2L
HYG120P06LR1D -60 -55 16 75 20 -1~-3 4882 91.5 single - P TO-252-2L
HYG210P06LQ1C2 -60 -40 25 60 20 -1~-3 3679 90 single - P PDFN8L(5x6)
HYG110P04LQ1D -40 -50 12 57.7 20 -1~-3 3938 90 single - P TO-252-2L

 259    1 2 3 4 5 6 7 8 9 10 下一页 尾页