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天易合芯
心率传感器
TWS光感
上海维安
低电容TVS
功率TVS
半导体放电管
集成电路保护器
共模滤波器
陶瓷气体放电气
压敏电阻
陶瓷ESD抑制器
N-MOSFET
P-MOSFET
Dual-P
Dual-N
Half Bridge
(N+P)-MOSFET
Part
Vds Min (V)
ID (A)
RDS(on) (mΩ)
PD (W)
Vgs (±V)
Vth (V)
Ciss (pF)
Qg (nC)
Configuration
Package
HYG170C03LR1S
30/-30
9.5/-8
16.5/30
3.0/3.0
20/20
1~3 /-1~-3
446/1210
13.7/18.5
N+P
SOP8L
HYG110C03LR1D4
30/-30
25/-17
14/30
21/21
20/20
1~3 /-1~-3
762/1300
15.9/20.2
N+P
TO-252-4L
HYG080NH03LR1C1
30
31/33
11/9.5
21.4/21.4
20/20
1~3 /1~3
709/966
16/23.2
Half Bridge
DFN8L(0303)
HYG080ND03LA1S
30
11
12
2.5
20
1~3
680
14.6
Dual - N
SOP8L
HYG170ND03LA1C1
30
24
19
17.8
20
1~3
354
9
Dual - N
DFN8L(0303)
HYG420ND06LR1S
60
5
46
2.4
20
1~3
750
15
Dual - N
SOP8L
HYG130ND03LR1S
30
10.5
14
2.8
20
1~3
546
16.1
Dual - N
SOP8L
HYG170ND03LR1S
30
9.5
16.1
2.6
20
1~3
446
13.7
Dual - N
SOP8L
HYG850PD02KA1C6
-20
-3.5
N/A
2
10
-0.4~-1
582
7.2
Dual - P
DFN6L(0202)
HYG200P10LR1B
-100
-80
28
214
20
-1~-3
11520
181
single - P
TO-263-2L
HYG400P10LR1P
-100
-40
58
100
20
-1~-3
5402
79
single - P
TO-220FB-3L
HYG400P10LR1B
-100
-40
58
100
20
-1~-3
5402
79
single - P
TO-263-2L
HYG200P10LR1P
-100
-80
28
214
20
-1~-3
11520
181
single - P
TO-220FB-3L
HYG400P10LR1D
-100
-40
55
100
20
-1~-3
5003
83
single - P
TO-252-2L
HY10P10U
-100
-10
225
31.3
20
-1~-3
1034
30
single - P
TO-251-3L
HY10P10D
-100
-10
225
31.3
20
-1~-3
1034
30
single - P
TO-252-2L
HYG800P10LR1D
-100
-20
98
75
20
-1~-3
3273
42.6
single - P
TO-252-2L
HYG800P10LR1S
-100
-8
87
5.4
20
-1~-3
3307
53.4
single - P
SOP8L
HY06P10S
-100
-6
215
2.5
20
-1~-3
900
28
single - P
SOP8L
HYG086P06LA1B
-60
-85
9
208
20
-1~-3
9202
169
single - P
TO-263-2L
HYG045P06LA1B
-60
-160
5
250
20
-1~-2.5
16993
319
single - P
TO-263-2L
HYG210P06LQ1D
-60
-40
25
60
20
-1~-3
3679
90
single - P
TO-252-2L
HYG120P06LR1D
-60
-55
16
75
20
-1~-3
4882
91.5
single - P
TO-252-2L
HYG210P06LQ1C2
-60
-40
25
60
20
-1~-3
3679
90
single - P
PDFN8L(5x6)
HYG110P04LQ1D
-40
-50
12
57.7
20
-1~-3
3938
90
single - P
TO-252-2L
说明:ID在TC=25℃测得;PD在TC=25℃测得;RDS在10V最大值条件下测得;Ciss为典型值;Qg为典型值;
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