深圳市优富瑞明科技有限公司
首页
华羿微
上海维安
天易合芯
关于我们
N-MOSFET
当前位置:
首页
>
华羿微
>
MOS
>
N-MOSFET
华羿微
MOS
IC
天易合芯
心率传感器
TWS光感
上海维安
低电容TVS
功率TVS
半导体放电管
集成电路保护器
共模滤波器
陶瓷气体放电气
压敏电阻
陶瓷ESD抑制器
N-MOSFET
P-MOSFET
Dual-P
Dual-N
Half Bridge
(N+P)-MOSFET
Part
Vds Min (V)
ID (A)
RDS(on) (mΩ)
PD (W)
Vgs (±V)
Vth (V)
Ciss (pF)
Qg (nC)
Configuration
Package
HY1920W
200
90
25
375
20
2~4
5871
130
single - N
TO-247A-3L
HY1920P
200
90
25
375
20
2~4
5871
130
single - N
TO-220FB-3L
HY1720P
200
64
32
263
20
3~5
5057
101
single - N
TO-220FB-3L
HY1720W
200
64
32
263
20
3~5
4816
102
single - N
TO-247A-3L
HYG065N15NS1B
150
165
7.5
375
20
2~4
6646
96
single - N
TO-262-3L
HY1420P
200
36
68
180
20
3~5
2444
53
single - N
TO-220FB-3L
HYG065N15NS1P
150
165
7.5
375
20
2~4
6646
96
single - N
TO-220FB-3L
HY3215I
150
120
15
300
25
3~5
5785
137
single - N
TO-262-3L
HY3215PM
150
120
15
300
25
3~5
5785
137
single - N
TO-3PM-3S
HY3215W
150
130
14
349
25
3~5
5925
135
single - N
TO-247A-3L
HY3215P
150
120
15
300
25
3~5
5785
137
single - N
TO-220FB-3L
HY3215B
150
120
15
300
25
3~5
5785
137
single - N
TO-263-2L
HY1515P
150
50
34
180
20
3~5
2447
56
single - N
TO-220FB-3L
HY1915P
150
85
18
263
20
3~5
5125
103
single - N
TO-220FB-3L
HYG050N13NS1B
135
200
5
375
20
2~4
11687
165
single - N
TO-263-2L
HYG050N13NS1B6
135
225
4.5
405
20
2~4
11687
165
single - N
TO-263-6L
HYG400N15NS1P
150
40
41
115
20
2~4
2140
30
single - N
TO-220FB-3L
HY3312B
125
130
9
278
25
2~4
5896
130
single - N
TO-263-2L
HYG050N13NS1P
135
200
5
375
20
2~4
11687
165
single - N
TO-220FB-3L
HY3312P
125
130
9
278
25
2~4
5896
130
single - N
TO-220FB-3L
HY3912W
125
190
7.5
349
25
2~4
7348
185
single - N
TO-247A-3L
HY5012W
125
300
3.6
500
25
2~4
16305
352
single - N
TO-247A-3L
HY3712B
125
170
7.5
339
25
2~4
8162
189
single - N
TO-263-2L
HY3712P
125
170
7.5
339
25
2~4
8162
189
single - N
TO-220FB-3L
HY5110W
100
316
2.5
500
25
2~4
16465
356
single - N
TO-247A-3L
说明:ID在TC=25℃测得;PD在TC=25℃测得;RDS在10V最大值条件下测得;Ciss为典型值;Qg为典型值;
220
1
2
3
4
5
6
7
8
9
下一页
尾页