深圳市优富瑞明科技有限公司

深圳市优富瑞明科技有限公司

P-MOSFET

说明:ID在TC=25℃测得;PD在TC=25℃测得;RDS在10V最大值条件下测得;Ciss为典型值;Qg为典型值;
Part Vds Min (V) ID (A) RDS(on) (mΩ) PD (W) Vgs (±V) Vth (V) Ciss (pF) Qg (nC) Configuration Package
HYG200P10LR1B -100 -80 28 214 20 -1~-3 11520 181 single - P TO-263-2L
HYG400P10LR1P -100 -40 58 100 20 -1~-3 5402 79 single - P TO-220FB-3L
HYG400P10LR1B -100 -40 58 100 20 -1~-3 5402 79 single - P TO-263-2L
HYG200P10LR1P -100 -80 28 214 20 -1~-3 11520 181 single - P TO-220FB-3L
HYG400P10LR1D -100 -40 55 100 20 -1~-3 5003 83 single - P TO-252-2L
HY10P10U -100 -10 225 31.3 20 -1~-3 1034 30 single - P TO-251-3L
HY10P10D -100 -10 225 31.3 20 -1~-3 1034 30 single - P TO-252-2L
HYG800P10LR1D -100 -20 98 75 20 -1~-3 3273 42.6 single - P TO-252-2L
HYG800P10LR1S -100 -8 87 5.4 20 -1~-3 3307 53.4 single - P SOP8L
HY06P10S -100 -6 215 2.5 20 -1~-3 900 28 single - P SOP8L
HYG086P06LA1B -60 -85 9 208 20 -1~-3 9202 169 single - P TO-263-2L
HYG045P06LA1B -60 -160 5 250 20 -1~-2.5 16993 319 single - P TO-263-2L
HYG210P06LQ1D -60 -40 25 60 20 -1~-3 3679 90 single - P TO-252-2L
HYG120P06LR1D -60 -55 16 75 20 -1~-3 4882 91.5 single - P TO-252-2L
HYG210P06LQ1C2 -60 -40 25 60 20 -1~-3 3679 90 single - P PDFN8L(5x6)
HYG110P04LQ1D -40 -50 12 57.7 20 -1~-3 3938 90 single - P TO-252-2L
HYG060P04LQ1D -40 -70 7.5 65 20 -1~-3 6774 128 single - P TO-252-2L
HYG110P04LQ1C2 -40 -50 12 57.7 20 -1~-3 3938 90 single - P PDFN8L(5x6)
HYG065P03LQ1D -30 -70 7.5 57.7 20 -1~-3 3595 86 single - P TO-252-2L
HYG045P03LQ1D -30 -90 5.5 60 20 -1~-3 6750 135.5 single - P TO-252-2L
HY15P03C2 -30 -60 6 52 20 -1~-3 4287 90 single - P PDFN8L(5x6)
HYG065P03LQ1C2 -30 -70 7.5 57.7 20 -1~-3 3598 86 single - P PDFN8L(5x6)
HYG045P03LQ1C2 -30 -80 5 62.5 20 -1~-3 7660 131.3 single - P PDFN8L(5x6)
HY12P03C2 -30 -50 11.5 42 20 -1~-3 2814 34 single - P PDFN8L(5x6)
HY12P03C1 -30 -30 12.5 23 20 -1~-3 2078 52.9 single - P DFN8L(0303)

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