深圳市优富瑞明科技有限公司

深圳市优富瑞明科技有限公司

N-MOSFET

说明:ID在TC=25℃测得;PD在TC=25℃测得;RDS在10V最大值条件下测得;Ciss为典型值;Qg为典型值;
Part Vds Min (V) ID (A) RDS(on) (mΩ) PD (W) Vgs (±V) Vth (V) Ciss (pF) Qg (nC) Configuration Package
HYG072N10LS1P 100 80 8 104 +20/-12 1~3 3070 54.3 single - N TO-220FB-3L
HY1710B 100 70 18 150 25 2~4 4200 94 single - N TO-263-2L
HY1710P 100 70 18 150 25 2~4 4200 94 single - N TO-220FB-3L
HY1710MF 100 70 18 150 25 2~4 4200 94 single - N TO-220MF-3L
HYG092N10LS1C2 100 60 9.6 62.5 20 1~3 2348 47 single - N PDFN8L(5x6)
HY3010D 100 60 12 65 25 2~4 3197 81 single - N TO-252-2L
HYG101N10LA1D 100 15 100 51.7 20 1~3 1072 26 single - N TO-252-2L
HY1710D 100 44 18.5 75 25 2~4 4200 94 single - N TO-252-2L
HYG072N10LS1S 100 14 8.6 5.4 +20/-12 1~3 2900 57 single - N SOP8L
HY0910D 100 9 143 21 20 1~3 720 11 single - N TO-252-2L
HYG130N10LS1S 100 11.5 13.4 3 20 1~3 1674 28.9 single - N SOP8L
HY0310S 100 3 143 2 20 1~3 720 11 single - N SOP8L
HY0810S 100 8 25 3.5 20 1~3 3400 78 single - N SOP8L
HY5608W 80 360 2 500 25 2~4 14715 365 single - N TO-247A-3L
HYG054N09NS1P 85 135 5.8 187.5 20 2~4 5067 88.5 single - N TO-220FB-3L
HY5208W 80 320 2 416 25 2~4 12160 298 single - N TO-247A-3L
HY4008B6 80 255 3.2 375 25 2~4 7457 209 single - N TO-263-6L
HY4008W 80 200 3.5 397 25 2~4 7398 195 single - N TO-247A-3L
HY4008B 80 200 3.5 345 25 2~4 8157 197 single - N TO-263-2L
HY4008P 80 200 3.5 345 25 2~4 8157 197 single - N TO-220FB-3L
HYG032N08NS1P 80 180 3.4 220.6 20 2~4 7520 118 single - N TO-220FB-3L
HY3708W 80 170 4.5 348 25 2~4 6410 154 single - N TO-247A-3L
HY3708B 80 170 5 288 25 2~4 6109 152 single - N TO-263-2L
HY3708P 80 170 5 288 25 2~4 6109 152 single - N TO-220FB-3L
HYG068N08NR1P 80 160 7.5 268 25 2~4 3722 84 single - N TO-220FB-3L

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