深圳市优富瑞明科技有限公司

深圳市优富瑞明科技有限公司

N-MOSFET

说明:ID在TC=25℃测得;PD在TC=25℃测得;RDS在10V最大值条件下测得;Ciss为典型值;Qg为典型值;
Part Vds Min (V) ID (A) RDS(on) (mΩ) PD (W) Vgs (±V) Vth (V) Ciss (pF) Qg (nC) Configuration Package
HYG065N07NS1D 70 70 6.5 62.5 20 2~4 29.8 52 single - N TO-252-2L
HYG065N07NS1P 70 100 6.5 125 20 2~4 2990 52 single - N TO-220FB-3L
HY1707PM 70 80 7 178 25 2~4 4550 88 single - N TO-3PM-3S
HY1001P 70 80 8.5 115 20 2~4 4170 79 single - N TO-220FB-3L
HY1001D 70 70 8.6 75 20 2~4 4200 82 single - N TO-252-2L
HY1707P 70 80 7 178 25 2~4 4550 88 single - N TO-220FB-3L
HY1707M 70 80 7 178 25 2~4 4550 88 single - N TO-220FB-3S
HY1707D 70 70 7.5 86 25 2~4 4600 92 single - N TO-252-2L
HY1607PM 68 80 7.8 115 25 2~4 3203 84 single - N TO-3PM-3S
HY1607PL 68 80 7.8 115 25 2~4 3203 84 single - N TO-3PM-3L
HY1607B 68 80 7.8 115 25 2~4 3203 84 single - N TO-263-2L
HYG035N06LS1C2 65 90 3.5 56 +20/-12 1~3 3687 76 single - N PDFN8L(5x6)
HYG067N07NQ1P 68 80 7.5 136 20 2~4 7193 115 single - N TO-220FB-3L
HY1607P 68 80 7.8 115 25 2~4 3203 84 single - N TO-220FB-3L
HYG035N06LS1D 65 150 4 183 +20/-12 1~3 3687 76.3 single - N TO-252-2L
HY1607D 68 70 8.5 75 25 2~4 3200 84 single - N TO-252-2L
HY030N06C2 65 100 2.8 48 +20/-12 1~3 5270 96 single - N PDFN8L(5x6)
HYG018N06LS1C2 65 140 2 68.1 20 1.2~2.5 4624 104 single - N PDFN8L(5x6)
HY030N06P 65 140 2.8 113.6 +20/-12 1~2.5 5270 96 single - N TO-220FB-3L
HY4306B6 60 290 2.2 375 25 2~4 8017 213 single - N TO-263-6L
HY3906W 60 190 3.5 283 25 2~4 5903 136 single - N TO-247A-3L
HY4306B 60 230 3 258 25 2~4 7219 171 single - N TO-263-2L
HY4306W 60 230 2.8 326 25 2~4 7406 171 single - N TO-247A-3L
HY3606P 60 162 4.5 214 25 2~4 4376 130 single - N TO-220FB-3L
HY3906P 60 190 4 220 25 2~4 5726 135 single - N TO-220FB-3L