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N-MOSFET
P-MOSFET
Dual-P
Dual-N
Half Bridge
(N+P)-MOSFET
Part
Vds Min (V)
ID (A)
RDS(on) (mΩ)
PD (W)
Vgs (±V)
Vth (V)
Ciss (pF)
Qg (nC)
Configuration
Package
HYG050N08NS1B
80
130
5
187.5
20
2~4
4280
68
single - N
TO-263-2L
HYG050N08NS1P
80
130
5
187.5
20
2~4
4280
68
single - N
TO-220FB-3L
HYG064N08NA1B
80
120
7.5
208
25
2~4
3080
65
single - N
TO-263-2L
HYG064N08NA1P
80
120
7.5
208
25
2~4
3080
65
single - N
TO-220FB-3L
HY3208B
80
120
8.5
226
25
2~4
2900
70
single - N
TO-263-2L
HY3208PM
80
120
8.5
226
25
2~4
2900
70
single - N
TO-3PM-3S
HY3208M
80
120
8.5
226
25
2~4
2900
70
single - N
TO-220FB-3S
HY3208P
80
120
8.5
226
25
2~4
2900
70
single - N
TO-220FB-3L
HY3208PL
80
120
8.5
226
25
2~4
2900
70
single - N
TO-3PM-3L
HYG035N08LS1C2
80
100
3.5
62.5
+20/-12
1.2~2.5
5080
108
single - N
PDFN8L(5x6)
HYG050N08NS1C2
80
100
5
93.7
20
2~4
4280
68
single - N
PDFN8L(5x6)
HYG055N08NS1P
80
120
6.8
187.5
20
2~4
3660
60
single - N
TO-220FB-3L
HYG072N08NR1P
80
100
7.9
188
25
2~4
2770
68
single - N
TO-220FB-3L
HY3008PL
80
100
8.5
200
25
2~4
3150
67
single - N
TO-3PM-3L
HY3008B
80
100
8.5
200
25
2~4
3150
67
single - N
TO-263-2L
HY3008PM
80
100
8.5
200
25
2~4
3150
67
single - N
TO-3PM-3S
HY8290P
80
94
8.5
150
25
2~4
5000
96
single - N
TO-220FB-3L
HY3008P
80
100
8.5
200
25
2~4
3150
67
single - N
TO-220FB-3L
HY1908MF
80
90
8.5
185
25
2~4
3800
86
single - N
TO-220MF-3L
HY1908B
80
90
8.5
185
25
2~4
3800
86
single - N
TO-263-2L
HY1908P
80
90
8.5
185
25
2~4
3800
86
single - N
TO-220FB-3L
HY1908D
80
90
9
64
25
2~4
3864
84
single - N
TO-252-2L
HYG055N08NS1C2
80
85
6
83.3
20
2~4
3660
60
single - N
PDFN8L(5x6)
HY3007P
70
120
7
200
25
2~4
3050
76
single - N
TO-220FB-3L
HYG065N07NS1B
70
100
6.5
125
20
2~4
2990
52
single - N
TO-263-2L
说明:ID在TC=25℃测得;PD在TC=25℃测得;RDS在10V最大值条件下测得;Ciss为典型值;Qg为典型值;
220
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