深圳市优富瑞明科技有限公司

深圳市优富瑞明科技有限公司

N-MOSFET

说明:ID在TC=25℃测得;PD在TC=25℃测得;RDS在10V最大值条件下测得;Ciss为典型值;Qg为典型值;
Part Vds Min (V) ID (A) RDS(on) (mΩ) PD (W) Vgs (±V) Vth (V) Ciss (pF) Qg (nC) Configuration Package
HYG110N11LS1S 115 14 13.5 8.3 20 1~3 2806 46.9 single - N SOP8L
HY029N10P 100 270 3.3 394.7 20 2~4 10800 148.7 single - N TO-220FB-3L
HY029N10B6 100 280 3 405 20 2~4 10800 150 single - N TO-263-6L
HY3810B6 100 218 4.4 375 25 2~4 7874 208 single - N TO-263-6L
HY029N10B 100 270 3.3 394.7 20 2~4 10800 148.7 single - N TO-263-2L
HY3810P 100 180 5.5 346 25 2~4 7889 185 single - N TO-220FB-3L
HY3810B 100 180 5.5 346 25 2~4 7889 185 single - N TO-263-2L
HY3810W 100 180 5.5 366 25 2~4 7500 193 single - N TO-247A-3L
HY3810NA2P 100 180 5.5 348 25 2~4 7409 159.2 single - N TO-220FB-3L
HY3810NA2B 100 180 5.5 348 25 2~4 7409 159.2 single - N TO-263-2L
HYG035N10NS2B 100 180 4 220 20 2~4 7270 115 single - N TO-263-2L
HYG035N10NS2P 100 180 4 220 20 2~4 7270 115 single - N TO-220FB-3L
HY3410P 100 140 7.5 285 25 2~4 6140 130 single - N TO-220FB-3L
HYG037N10LS1B 100 150 4.2 176.5 20 1.2~2.5 6070 110 single - N TO-263-2L
HY3410NA2P 100 140 7 288 20 2~4 6835 133 single - N TO-220FB-3L
HYG042N10NS1P 100 160 4.2 200 20 2~4 7040 119 single - N TO-220FB-3L
HYG042N10NS1B 100 160 4.2 200 20 2~4 7040 119 single - N TO-263-2L
HY3410B 100 140 7.5 285 25 2~4 6140 130 single - N TO-263-2L
HYG050N10NS1P 100 135 5.2 189.8 20 2~4 6359 100 single - N TO-220FB-3L
HYG045N10NS1P 100 160 4.5 250 20 2~4 7877 177 single - N TO-220FB-3L
HY3210P 100 120 8.5 237 25 2~4 4922 120 single - N TO-220FB-3L
HY3210B 100 120 8.5 237 25 2~4 4922 120 single - N TO-263-2L
HY3010P 100 100 12 192 25 2~4 3100 76 single - N TO-220FB-3L
HY3010B 100 100 12 192 25 2~4 3100 76 single - N TO-263-2L
HYG072N10LS1C2 100 80 7.5 75 +20/-12 1~3 2980 56 single - N PDFN8L(5x6)

 220   首页 上一页 1 2 3 4 5 6 7 8 9 下一页 尾页